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MBE growth of AlGaAs/GaAs double- heterostructure light emitting diodes on GaAs(111)A and (211)A substrates using all-silicon doping

✍ Scribed by K. Fujita; H. Ohnishi; P.O. Vaccaro; T. Watanabe

Publisher: Elsevier Science
Year: 1997
Tongue: English
Weight: 307 KB
Volume: 28
Category: Article
ISSN: 0026-2692
DOI: 10.1016/s0026-2692(96)00143-7

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✦ Synopsis

A10.3Ga0.TAs/GaAs double-heterostructure (DH) light emitting diodes have been grown on GaAs (lll)A and (211)A substrates by molecular beam epitaxy using only Si dopant.