Zn-doped InGaN growth and InGaN/AlGaN double-heterostructure blue-light-emitting diodes
β Scribed by Shuji Nakamura
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 520 KB
- Volume
- 145
- Category
- Article
- ISSN
- 0022-0248
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The effect of polarization-matched AlGaInN electron-blocking layer and barrier layer on the optical performance of blue InGaN light-emitting diodes is numerically investigated. The polarization-matched AlGaInN electron-blocking layer and barrier layer are employed in an attempt to reduce the polariz
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