Numerical simulation of blue InGaN light-emitting diodes with polarization-matched AlGaInN electron-blocking layer and barrier layer

✍ Scribed by Yen-Kuang Kuo; Miao-Chan Tsai; Sheng-Horng Yen

• Publisher: Elsevier Science
• Year: 2009
• Tongue: English
• Weight: 481 KB
• Volume: 282
• Category: Article
• ISSN: 0030-4018
• DOI: 10.1016/j.optcom.2009.07.036

✦ Synopsis

The effect of polarization-matched AlGaInN electron-blocking layer and barrier layer on the optical performance of blue InGaN light-emitting diodes is numerically investigated. The polarization-matched AlGaInN electron-blocking layer and barrier layer are employed in an attempt to reduce the polarization effect inside the active region of the light-emitting diodes. The simulation results show that the polarization-matched AlGaInN electron-blocking layer is beneficial for confining the electrons inside the quantum well region. With the use of both polarization-matched AlGaInN electron-blocking layer and barrier layer, the optical performance of blue InGaN light-emitting diodes is greatly improved due to the increased overlap of electron and hole wavefunctions. The method proposed in this paper can also be applied to the light-emitting diodes operating in other spectral range.