Electroluminescence properties of GaInP/GaAs:Er,O/GaInP double heterostructure light-emitting diodes at low temperature

✍ Scribed by Yoshikazu Terai; Takehiro Tokuno; Hideki Ichida; Yasuo Kanematsu; Yasufumi Fujiwara

• Publisher: Elsevier Science
• Year: 2009
• Tongue: English
• Weight: 315 KB
• Volume: 31
• Category: Article
• ISSN: 0925-3467
• DOI: 10.1016/j.optmat.2008.10.007

✦ Synopsis

Low-temperature Er-related electroluminescence (EL) properties have been investigated in Er,O-codoped GaAs (GaAs:Er,O) light-emitting diode (LED) grown by organometallic vapor phase epitaxy. Under forward bias at 77 K, the EL spectra from a cleaved edge of the LED were dominated by the luminescence due to an Er-2O center, indicating that injected carriers contribute effectively to the excitation of the Er-2O center. Excitation cross-sections of Er ions by current injection were obtained by the current density dependence of the EL intensity and its time response. The excitation cross-sections depended on temperature and the active layer thickness of the LED.