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Room temperature 1.5 μm electroluminescnence from GaInP/Er,O-codoped GaAs/GaInP double heterostructure injection-type light emitting diodes grown by organometallic vapor phase epitaxy

✍ Scribed by Y Fujiwara; A Koizumi; A Urakami; T Yoshikane; K Inoue; Y Takeda


Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
94 KB
Volume
105
Category
Article
ISSN
0921-5107

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