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Effects of active layer thickness on Er excitation cross section in GaInP/GaAs:Er,O/GaInP double heterostructure light-emitting diodes

โœ Scribed by A. Koizumi; Y. Fujiwara; A. Urakami; K. Inoue; T. Yoshikane; Y. Takeda

Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
246 KB
Volume
340-342
Category
Article
ISSN
0921-4526

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Electroluminescence properties of GaInP/
Electroluminescence properties of GaInP/GaAs:Er,O/GaInP double heterostructure light-emitting diodes at low temperature
โœ Yoshikazu Terai; Takehiro Tokuno; Hideki Ichida; Yasuo Kanematsu; Yasufumi Fujiw ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 315 KB

Low-temperature Er-related electroluminescence (EL) properties have been investigated in Er,O-codoped GaAs (GaAs:Er,O) light-emitting diode (LED) grown by organometallic vapor phase epitaxy. Under forward bias at 77 K, the EL spectra from a cleaved edge of the LED were dominated by the luminescence