Physics-Based Compact Model for AlGaN/GaN MODFETs With Close-Formed – and – Characteristics
✍ Scribed by Xiaoxu Cheng; Miao Li; Yan Wang
- Book ID
- 111893197
- Publisher
- IEEE
- Year
- 2009
- Tongue
- English
- Weight
- 475 KB
- Volume
- 56
- Category
- Article
- ISSN
- 0018-9383
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A physics-based model of AlGaN/GaN High Electron Mobility Transistor (HEMT) is developed for the analysis of DC and microwave characteristics. Large-and small-signal parameters are calculated for a given device dimensions and operating conditions. Spontaneous and piezoelectric polarizations at the h
## Abstract A two‐dimensional analytical model for an AlGaN/GaN MODFET is presented. The model assumes the velocity saturation of electrons in 2‐DEG, which causes current saturation and accurately predicts the output conductance arising from the channel length modulation. The effects of spontaneous