## Abstract A two‐dimensional analytical model for an AlGaN/GaN MODFET is presented. The model assumes the velocity saturation of electrons in 2‐DEG, which causes current saturation and accurately predicts the output conductance arising from the channel length modulation. The effects of spontaneous
✦ LIBER ✦
2-D Analytical Model for Current–Voltage Characteristics and Transconductance of AlGaN/GaN MODFETs
✍ Scribed by Miao Li; Yan Wang
- Book ID
- 114619043
- Publisher
- IEEE
- Year
- 2008
- Tongue
- English
- Weight
- 239 KB
- Volume
- 55
- Category
- Article
- ISSN
- 0018-9383
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