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Physically based simulation of electromigration-induced degradation mechanisms in dual-inlaid copper interconnects

✍ Scribed by Sukharev, V.

Book ID: 117907408
Publisher: IEEE
Year: 2005
Tongue: English
Weight: 381 KB
Volume: 24
Category: Article
ISSN: 0278-0070
DOI: 10.1109/tcad.2005.852061

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