Physically based modeling of low field electron mobility in ultrathin single- and double-gate SOI n-MOSFETs

✍ Scribed by Esseni, D.; Abramo, A.; Selmi, L.; Sangiorgi, E.

• Book ID: 114617260
• Publisher: IEEE
• Year: 2003
• Tongue: English
• Weight: 633 KB
• Volume: 50
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2003.819256