A Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate n-MOSFETs With Different Surface and Channel Orientations—Part I: Fundamental Principles

✍ Scribed by Silvestri, L.; Reggiani, S.; Gnani, E.; Gnudi, A.; Baccarani, G.

• Book ID: 114620021
• Publisher: IEEE
• Year: 2010
• Tongue: English
• Weight: 410 KB
• Volume: 57
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2010.2049210