Physics-based analytical modeling of potential and electrical field distribution in dual material gate (DMG)-MOSFET for improved hot electron effect and carrier transport efficiency

✍ Scribed by Saxena, M.; Haldar, S.; Gupta, M.; Gupta, R.S.

• Book ID: 114616881
• Publisher: IEEE
• Year: 2002
• Tongue: English
• Weight: 633 KB
• Volume: 49
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2002.804701