Modeling and simulation of a nanoscale three-region tri-material gate stack (TRIMGAS) MOSFET for improved carrier transport efficiency and reduced hot-electron effects

✍ Scribed by Goel, K.; Saxena, M.; Gupta, M.; Gupta, R.S.

• Book ID: 114618318
• Publisher: IEEE
• Year: 2006
• Tongue: English
• Weight: 703 KB
• Volume: 53
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2006.876272