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Physical vapor deposition of thick cr and its carbide and nitride films by hollow-cathode discharge


Book ID
108389506
Publisher
Elsevier Science
Year
1976
Tongue
English
Weight
337 KB
Volume
26
Category
Article
ISSN
0042-207X

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Thermoelectric properties of SiC thick f
✍ X.H Wang; A Yamamoto; K Eguchi; H Obara; T Yoshida πŸ“‚ Article πŸ“… 2003 πŸ› Institute of Physics and National Institute of Mat 🌐 English βš– 348 KB

SiC thick films of about 300 mm could be prepared with a deposition rate above 300 nm/s by thermal plasma physical vapor deposition (TPPVD) using ultrafine SiC powder as a starting material. The thermoelectric properties were investigated as a function of composition and doping content. The nondoped