𝔖 Bobbio Scriptorium
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Physical vapor deposition of chromium and titanium nitrides by the hollow cathode discharge process

✍ Scribed by T. Sato; M. Tada; Y.C. Huang; H. Takei


Book ID
107862524
Publisher
Elsevier Science
Year
1978
Tongue
English
Weight
273 KB
Volume
54
Category
Article
ISSN
0040-6090

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Effects of substrate bias and argon flux
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## Abstract High‐quality titanium nitride (TiN) films with nano‐structure were prepared at ambient temperature on (111) silicon substrates by filtered cathodic arc plasma (FCAP) technology with an in‐plane β€œS” filter. The effects of substrate bias and argon flux on the crystal grain size, roughness