Physical mechanisms of boron diffusion gettering of iron in silicon
✍ Scribed by V. Vähänissi; A. Haarahiltunen; H. Talvitie; M. Yli-Koski; J. Lindroos; H. Savin
- Book ID
- 112183004
- Publisher
- John Wiley and Sons
- Year
- 2010
- Tongue
- English
- Weight
- 181 KB
- Volume
- 4
- Category
- Article
- ISSN
- 1862-6254
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## Abstract We studied the simultaneous phosphorus and boron diffusion gettering (BDG) of iron in silicon by physical modeling. We present improvements to the previously used models for BDG and phosphorus diffusion gettering (PDG). We show that the improved model is suitable for analyzing the gette
## Abstract Mechanisms for phosphorus (P) diffusion gettering (PDG) for iron are supplemented by possible formation of iron–phosphorus complexes in heavy P‐doped region. Existence of such complexes was recently reported based on the results of electron‐spin resonance investigations. DLTS measuremen