Involvement of iron-phosphorus complexes in iron gettering for n-type silicon

✍ Scribed by Mchedlidze, T. ;Kittler, M.

• Publisher: John Wiley and Sons
• Year: 2006
• Tongue: English
• Weight: 229 KB
• Volume: 203
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200564512

✦ Synopsis

Abstract

Mechanisms for phosphorus (P) diffusion gettering (PDG) for iron are supplemented by possible formation of iron–phosphorus complexes in heavy P‐doped region. Existence of such complexes was recently reported based on the results of electron‐spin resonance investigations. DLTS measurements suggest a high probability for the formation of iron–phosphorus complexes in n‐type silicon in the presence of vacancies and/or vacancy–phosphorus pairs. On the other hand, recent theoretical calculations predict formation of negatively charged vacancy–phosphorus pairs in the heavily P‐doped region of silicon during PDG. These facts indicate on possibility to explain the high efficiency of the PDG process for iron by assuming formation of iron–phosphorus complexes in the heavy P‐doped region of silicon. Possible advantages of application of hydrogen or nitrogen assisted PDG are considered. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)