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Photon-induced dry etching of Si(100) in the VUV

โœ Scribed by U. Streller; B. Li; A. Krabbe; N. Schwentner

Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
486 KB
Volume
96-98
Category
Article
ISSN
0169-4332

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โœ U. Streller; A. Krabbe; H. Raaf; N. Schwentner ๐Ÿ“‚ Article ๐Ÿ“… 1998 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 124 KB

Light-induced dry etching of Si(100) in the VUV range using synchrotron radiation (SR) and a halogen-containing gas (XeF 2 ) has been investigated with respect to selectivity, anisotropy, quantum efficiency, optimal wavelength, spatial resolution and quality of the photochemical etching processes. M