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Photoluminescence study of GaAs films on Si(100) grown by atomic hydrogen-assisted molecular beam epitaxy

โœ Scribed by Yoshitaka Okada; Shigeru Ohta; Akio Kawabata; Hirofumi Shimomura; Mitsuo Kawabe


Book ID
112822100
Publisher
Springer US
Year
1994
Tongue
English
Weight
542 KB
Volume
23
Category
Article
ISSN
0361-5235

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Quality of molecular-beam-epitaxy-grown
โœ U. Rossow; T. Fieseler; D.R.T. Zahn; W. Richter; D.A. Woolf; D.I. Westwood; R.H. ๐Ÿ“‚ Article ๐Ÿ“… 1990 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 282 KB

GaAs has been grown by molecular beam epitaxy on Si(lO0) using different substrate preparations, different conditions for the growth of a buffer layer and different thicknesses of the active layer. The quality of the layers is assessed by the direct interpretation of the pseudodielectric function ob