Photoluminescence studies of indium nitride films grown on oxide buffer by metalorganic molecular-beam epitaxy

✍ Scribed by Fang-I Lai; Shou-Yi Kuo; Woei-Tyng Lin; Wei-Chun Chen; Chien-Nan Hsiao; Yu-Kai Liu; Ji-Lin Shen

• Book ID: 104022271
• Publisher: Elsevier Science
• Year: 2011
• Tongue: English
• Weight: 666 KB
• Volume: 320
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/j.jcrysgro.2010.12.020

✦ Synopsis

We have investigated the effects of III/V ratio on the properties of InN films grown on sapphire substrates with oxide buffer by metalorganic molecular-beam epitaxy. The structural, optical and electrical properties of the InN films were investigated by X-ray diffraction, scanning electron microscopy, Hall-effect and temperature-dependent photoluminescence (PL) measurements. Nearinfrared emission peaks between 0.74 and 0.78 eV were observed. On increasing the III/V flux ratio, the PL emission peak red-shifted that is related to the reduction in carrier concentration. In addition, the PL spectra show an abnormal behavior with increase in temperature. The temperature-dependence PL spectra exhibit blue-shift as the temperature increased up to 150 K and then red-shift, reflecting a competition between the blue-shift induced by thermal screening and the red-shift induced by electron-phonon interaction.