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Photoluminescence study of γ-In2Se3 epitaxial films grown by molecular beam epitaxy

✍ Scribed by Tomohiko Ohtsuka; Tamotsu Okamoto; Akira Yamada; Makoto Konagai

Book ID
108344917
Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
106 KB
Volume
87-89
Category
Article
ISSN
0022-2313

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Photoluminescence studies of indium nitr
Photoluminescence studies of indium nitride films grown on oxide buffer by metalorganic molecular-beam epitaxy
✍ Fang-I Lai; Shou-Yi Kuo; Woei-Tyng Lin; Wei-Chun Chen; Chien-Nan Hsiao; Yu-Kai L 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 666 KB

We have investigated the effects of III/V ratio on the properties of InN films grown on sapphire substrates with oxide buffer by metalorganic molecular-beam epitaxy. The structural, optical and electrical properties of the InN films were investigated by X-ray diffraction, scanning electron microscop