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Photoluminescence Properties of Epitaxial Layers on Highly Doped Silicon Substrates

โœ Scribed by Schramm, G.

Publisher
John Wiley and Sons
Year
1992
Tongue
English
Weight
231 KB
Volume
129
Category
Article
ISSN
0031-8965

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Porous silicon (PSi) samples were prepared by electrochemical etching of silicon-on-insulator wafers, consisting of 45 m thick p-type (111) silicon epitaxial layer grown on a thin 100 nm SiO 2 layer on silicon substrates, by varying the concentration of 48% HF in ethanol solution. Within the epitaxi