Photoluminescence of InAs quantum dots embedded in graded InGaAs barriers
โ Scribed by Zongyou Yin; Xiaohong Tang; Jixuan Zhang; Jinghua Zhao; Sentosa Deny; Hao Gong
- Book ID
- 106477282
- Publisher
- Springer Netherlands
- Year
- 2008
- Tongue
- English
- Weight
- 569 KB
- Volume
- 11
- Category
- Article
- ISSN
- 1388-0764
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๐ SIMILAR VOLUMES
We have characterized self-assembled InAs quantum dots grown on the top of a single InGaAs/GaAs quantum well (QD's:QW) by measuring photoluminescence (PL) spectra as an effective technique. We have found that the linewidths of the PL peaks for the QD's:QW are narrower than that for the InAs quantum
Effects of erbium doping on photocarrier lifetime have been investigated for self-assembled InAs quantum dots (QDs) embedded in strain-relaxed In 0.35 Ga 0.65 As barriers grown on (1 0 0) GaAs substrates by molecular beam epitaxy. Time-resolved transmission change measurements were performed on 20-l