Effect of size non-uniformity on photoluminescence from ensembles of InAs quantum dots embedded in GaAs
โ Scribed by Naiyun Tang
- Publisher
- Springer
- Year
- 2007
- Tongue
- English
- Weight
- 321 KB
- Volume
- 42
- Category
- Article
- ISSN
- 0022-2461
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๐ SIMILAR VOLUMES
InAs quantum dots (QDs) on GaAs (0 0 1) substrates were grown by Molecular Beam Epitaxy (MBE) using two growth temperatures. Photoluminescence (PL) pump power dependence measurements at low temperature were carried out for sample grown at higher temperature (520 8C). With increasing excitation densi
A low-temperature micro-photoluminescence (m-PL) investigation of InAs/GaAs quantum dots (QDs) exposed to a lateral external electric field is reported. It is demonstrated that the QDs PL signal could be increased several times by altering the external and/or the internal electric field. The interna