𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Photoluminescence studies of InAs/GaAs quantum dots covered by InGaAs layers

✍ Scribed by G.W. Shu; J.S. Wang; J.L. Shen; R.S. Hsiao; J.F. Chen; T.Y. Lin; C.H. Wu; Y.H. Huang; T.N. Yang


Book ID
108215683
Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
411 KB
Volume
166
Category
Article
ISSN
0921-5107

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Photoluminescence studies of self-assemb
✍ X. Mu; Y. J. Ding; Z. Wang; G. J. Salamo πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 398 KB

We have characterized self-assembled InAs quantum dots grown on the top of a single InGaAs/GaAs quantum well (QD's:QW) by measuring photoluminescence (PL) spectra as an effective technique. We have found that the linewidths of the PL peaks for the QD's:QW are narrower than that for the InAs quantum

Abnormal temperature dependence of photo
✍ Z.Y. Zhang; C.L. Yang; Y.Q. Wei; X.L. Ye; P. Jin; Ch.M. Li; X.Q. Meng; B. Xu; Z. πŸ“‚ Article πŸ“… 2003 πŸ› Elsevier Science 🌐 English βš– 289 KB

In this report we have investigated the temperature dependence of photoluminescence (PL) from self-assembled InAs quantum dots (QDs) covered by an InAlAs/InGaAs combination layer. The ground state experiences an abnormal variation of PL linewidth from 15 K up to room temperature. Meanwhile, the PL i