Photoluminescence studies of InAs/GaAs quantum dots covered by InGaAs layers
β Scribed by G.W. Shu; J.S. Wang; J.L. Shen; R.S. Hsiao; J.F. Chen; T.Y. Lin; C.H. Wu; Y.H. Huang; T.N. Yang
- Book ID
- 108215683
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 411 KB
- Volume
- 166
- Category
- Article
- ISSN
- 0921-5107
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π SIMILAR VOLUMES
We have characterized self-assembled InAs quantum dots grown on the top of a single InGaAs/GaAs quantum well (QD's:QW) by measuring photoluminescence (PL) spectra as an effective technique. We have found that the linewidths of the PL peaks for the QD's:QW are narrower than that for the InAs quantum
In this report we have investigated the temperature dependence of photoluminescence (PL) from self-assembled InAs quantum dots (QDs) covered by an InAlAs/InGaAs combination layer. The ground state experiences an abnormal variation of PL linewidth from 15 K up to room temperature. Meanwhile, the PL i