High quality InAs quantum dots covered by InGaAs/GaAs hetero-capping layer
β Scribed by R. Ohtsubo; K. Yamaguchi
- Book ID
- 104556392
- Publisher
- John Wiley and Sons
- Year
- 2003
- Tongue
- English
- Weight
- 220 KB
- Volume
- 0
- Category
- Article
- ISSN
- 1862-6351
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π SIMILAR VOLUMES
The effect of rapid thermal annealing on InAs quantum dots (QDs) capped with In 0.4 Ga 0.6 As/GaAs layer has been investigated by photoluminescence (PL). An unusual red shift of the PL emission peak has been observed for an annealing temperature (T a ) of 650 -C together with a pronounced improvemen
In this report we have investigated the temperature dependence of photoluminescence (PL) from self-assembled InAs quantum dots (QDs) covered by an InAlAs/InGaAs combination layer. The ground state experiences an abnormal variation of PL linewidth from 15 K up to room temperature. Meanwhile, the PL i