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Photoluminescence investigation of GaAs1 − xBix/GaAs heterostructures

✍ Scribed by Vaidas Pačebutas; Renata Butkutė; Bronius Čechavičius; Julius Kavaliauskas; Arūnas Krotkus


Book ID
116943616
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
720 KB
Volume
520
Category
Article
ISSN
0040-6090

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We have developed undoped (1 0 0) GaAs/Al 0.34 Ga 0.66 As heterostructures, in which a 2D hole system is introduced by a heavily carbon doped field effect gate. We compare transport and mobility data from these (1 0 0) undoped devices with conventional Si modulation doped p-type devices grown on (3