Photoluminescence in doped GaN bulk crystal
β Scribed by H. Teisseyre; P. Perlin; T. Suski; I. Grzegory; J. Jun; S. Porowski
- Book ID
- 107815008
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 270 KB
- Volume
- 56
- Category
- Article
- ISSN
- 0022-3697
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An epitaxial GaN layer was doped with the radioactive isotope 191 Pt by ion implantation at the online mass separator facility ISOLDE at CERN (energy 60 keV, maximum dose of 3 Γ 10 12 ions/cm 2 ). The isotope 191 Pt decays with a halflife of 2.9 d into stable 191 Ir. After annealing at 1300 K severa
## Abstract Photoluminescence (PL) properties are reported for a set of __m__βplane GaN films with Mg doping varied from mid 10^18^βcm^β3^ to above 10^20^βcm^β3^. The samples were grown with MOCVD at reduced pressure on low defect density bulk GaN templates. The sharp line near bandgap bound excito
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