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Photoluminescence of bulk Eu-doped GaN crystals

✍ Scribed by V. V. Krivolapchuk; M. M. Mezdrogina; A. V. Nasonov; S. N. Rodin

Book ID
110135548
Publisher
SP MAIK Nauka/Interperiodica
Year
2003
Tongue
English
Weight
56 KB
Volume
45
Category
Article
ISSN
1063-7834

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## Abstract Photoluminescence (PL) properties are reported for a set of __m__‐plane GaN films with Mg doping varied from mid 10^18^ cm^βˆ’3^ to above 10^20^ cm^βˆ’3^. The samples were grown with MOCVD at reduced pressure on low defect density bulk GaN templates. The sharp line near bandgap bound excito