Photoluminescence spectra of Eu-doped GaN
β Scribed by Sawahata, J. ;Seo, J. W. ;Chen, S. ;Akimoto, K.
- Publisher
- John Wiley and Sons
- Year
- 2008
- Tongue
- English
- Weight
- 238 KB
- Volume
- 205
- Category
- Article
- ISSN
- 0031-8965
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β¦ Synopsis
Abstract
Luminescence spectra of Euβdoped GaN with varying Eu concentration and V/III ratio were investigated. Euβrelated luminescence originating from the ^5^D~0~β^7^F~2~ transition of Eu^3+^ was observed at about 622 nm. The luminescence basically consisted of three peaks, and the relative intensity of the three peaks was affected by the Eu concentration and the V/III ratio. These results indicate that the Eu incorporation site is very sensitive to the Eu concentration and the V/III ratio. (Β© 2008 WILEYβVCH Verlag GmbH & Co. KGaA, Weinheim)
π SIMILAR VOLUMES
An epitaxial GaN layer was doped with the radioactive isotope 191 Pt by ion implantation at the online mass separator facility ISOLDE at CERN (energy 60 keV, maximum dose of 3 Γ 10 12 ions/cm 2 ). The isotope 191 Pt decays with a halflife of 2.9 d into stable 191 Ir. After annealing at 1300 K severa