This work reports the photoluminescence (PL) study of vanadium-doped GaN (GaN: V) in the 9-300 K range. Samples have been successfully prepared on sapphire substrates by metalorganic vapour phase epitaxy technique (MOVPE). At room temperature (RT) the PL spectra of GaN: V are dominated by a blue ban
β¦ LIBER β¦
Near-infrared photoluminescence of V-doped GaN
β Scribed by H. Touati; M. Souissi; Z. Chine; B. El Jani
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 347 KB
- Volume
- 39
- Category
- Article
- ISSN
- 0026-2692
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