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Near infrared photonic devices based on Er-doped GaN and InGaN

✍ Scribed by R. Dahal; J.Y. Lin; H.X. Jiang; J.M. Zavada

Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 469 KB
Volume: 33
Category: Article
ISSN: 0925-3467
DOI: 10.1016/j.optmat.2010.10.002

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