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Photoluminescence and photothermal deflection spectroscopy in potassium doped a-Si:H

✍ Scribed by R. Galloni; R. Rizzoli; C. Summonte; F. Zignani; Y. Xiao; J.I. Pankove


Book ID
115989084
Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
300 KB
Volume
164-166
Category
Article
ISSN
0022-3093

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Hydrogen related effects in a-Si:H studi
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A study of thermal annealing of a-Si: H samples between 300 and 600Β°C has been carried out. At increasing annealing temperatures, the sub-gap absorption measured by PDS increases showing two inflections, centered at 375 and 550Β°C. The hydrogen content measured by thermal desorption spectroscopy evol