Hydrogen related effects in a-Si:H studi
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J. Serra; J. Andreu; G. Sardin; C. Roch; J.M. Asensi; J. Bertomeu; J. Esteve
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Article
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1991
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Elsevier Science
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English
β 240 KB
A study of thermal annealing of a-Si: H samples between 300 and 600Β°C has been carried out. At increasing annealing temperatures, the sub-gap absorption measured by PDS increases showing two inflections, centered at 375 and 550Β°C. The hydrogen content measured by thermal desorption spectroscopy evol