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Depth profiling of defects in a-Si:H by photothermal deflection spectroscopy

✍ Scribed by A. Asano; M. Stutzmann


Book ID
117147073
Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
239 KB
Volume
137-138
Category
Article
ISSN
0022-3093

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Hydrogen related effects in a-Si:H studi
✍ J. Serra; J. Andreu; G. Sardin; C. Roch; J.M. Asensi; J. Bertomeu; J. Esteve πŸ“‚ Article πŸ“… 1991 πŸ› Elsevier Science 🌐 English βš– 240 KB

A study of thermal annealing of a-Si: H samples between 300 and 600Β°C has been carried out. At increasing annealing temperatures, the sub-gap absorption measured by PDS increases showing two inflections, centered at 375 and 550Β°C. The hydrogen content measured by thermal desorption spectroscopy evol