A Raman investigation on InP layers grown by Metal Organic Vapour Phase Epitaxy on GaAs (001) substrates, with thicknesses exceeding the critical thickness and ranging from 23 to \(280 \mathrm{~nm}\), is reported. The InP LO phonon shows an increasing frequency blueshift with decreasing layer thickn
✦ LIBER ✦
Photoemission study of a in diffusion barrier in ZnSe/InP(100) heterostructures
✍ Scribed by Dennis Rioux; Hartmut Höchst
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 660 KB
- Volume
- 68
- Category
- Article
- ISSN
- 0368-2048
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