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Photoelectric and structural properties of a-Si1-xGex: H alloys prepared using Si2H6 and GeH4

โœ Scribed by Shin-ichi Muramatsu; Shigeru Kokunai; Yoichi Nishino; Hiroshi Kajiyama; Sunao Matsubara; Haruo Itoh; Nobuo Nakamura; Toshikazu Shimada


Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
303 KB
Volume
33-34
Category
Article
ISSN
0169-4332

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โœ Gen Inoue; M. Suzuki ๐Ÿ“‚ Article ๐Ÿ“… 1985 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 313 KB

Reaction rate constartls of SiHI(%'At) have been directly measured for the first time using the laser photolysis-laser-induced fluorescence method. The preparation of SiH: radical in the laser photolysis (193 m-n) or phenylsilane and the concentration of the radiczd is demonstrated by a dye laser at