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Photoconductivity of solid-state-reacted SnSe thin films

โœ Scribed by S. S. Siddiqui; C. F. Desai

Publisher
Springer
Year
1994
Tongue
English
Weight
128 KB
Volume
13
Category
Article
ISSN
0261-8028

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Tin monoselinide thin films were obtained by solid state reaction in vacuum. They were characterised by X-ray diffraction and subjected to resistivity and optical absorbance measurements. The data were analysed for obtaining activation energy and band gap. The effects of varying deposition parameter

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It is observed froni the studies of electrical resistivity of films of SnSe of different thicknesses and substrate temperatures that resistivity decreases with increase in thickness and substrate temperature. The study of variation in band gap with thickness shows a linear relationship between band