A reaction engineering model has been developed to describe the mercury-sensitized photochemical vapor deposition of hydrogenated amorphous silicon (a-Si:H) semiconductor thin films. Model equations governing the gas-phase generation, transport, and surface reactions of SiH, and H film precursor rad
β¦ LIBER β¦
Photochemical vapor deposition of titaniumdiboride
β Scribed by J. Elders; D. Bebelaar; J.D.W. van Voorst
- Publisher
- Elsevier Science
- Year
- 1990
- Tongue
- English
- Weight
- 445 KB
- Volume
- 46
- Category
- Article
- ISSN
- 0169-4332
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