Mercury-sensitized photochemical vapor deposition of amorphous silicon

✍ Scribed by D. E. Albright; N. Saxena; C. M. Fortmann; R. E. Rocheleau; T. W. F. Russell

• Publisher: American Institute of Chemical Engineers
• Year: 1990
• Tongue: English
• Weight: 655 KB
• Volume: 36
• Category: Article
• ISSN: 0001-1541
• DOI: 10.1002/aic.690361011

✦ Synopsis

A reaction engineering model has been developed to describe the mercury-sensitized photochemical vapor deposition of hydrogenated amorphous silicon (a-Si:H) semiconductor thin films. Model equations governing the gas-phase generation, transport, and surface reactions of SiH, and H film precursor radicals are solved to predict film growth rate and bonded hydrogen content. Behavior of the model has been studied as a function of deposition conditions (pressure, temperature, feed composition, and flow rates) and has been verified by comparison with experimental results.