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Radiative transfer in mercury-sensitized photochemical vapor deposition

✍ Scribed by Jérôme Perrin; Ton Broekhuizen


Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
687 KB
Volume
38
Category
Article
ISSN
0022-4073

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A reaction engineering model has been developed to describe the mercury-sensitized photochemical vapor deposition of hydrogenated amorphous silicon (a-Si:H) semiconductor thin films. Model equations governing the gas-phase generation, transport, and surface reactions of SiH, and H film precursor rad