Mercury-sensitized photochemical vapor d
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D. E. Albright; N. Saxena; C. M. Fortmann; R. E. Rocheleau; T. W. F. Russell
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Article
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1990
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American Institute of Chemical Engineers
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English
⚖ 655 KB
A reaction engineering model has been developed to describe the mercury-sensitized photochemical vapor deposition of hydrogenated amorphous silicon (a-Si:H) semiconductor thin films. Model equations governing the gas-phase generation, transport, and surface reactions of SiH, and H film precursor rad