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Photo-emf in Parabolic Graded-Gap Semiconductors

✍ Scribed by Aroutiounian, V.M. ;Gevorkyan, V.A. ;Yesayan, A.E. ;Petrosyan, S.G.

Publisher
John Wiley and Sons
Year
2001
Tongue
English
Weight
74 KB
Volume
184
Category
Article
ISSN
0031-8965

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✦ Synopsis

We have calculated the photo-emf in square profile graded band-gap semiconductor structures under local illumination. It is shown that the photo-emf is a linear function of the position of a light strip on the photosensitive surface and it changes the sign when the light strip passes across the center of the structure. The coordinate sensitivity of Ga 1--x Al x As graded-gap structure can be larger than 1.4 Γ‚ 10 6 V/Wm.

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