## Abstract The PME effect in an inhomogeneous semiconductor is calculated assuming uniform local mobilities. An experiment is described in which a gapβgradient is induced in a germanium crystal by means of a pressure gradient. The result is consistent with previously measured values of the pressur
β¦ LIBER β¦
PEM-effect in graded-gap semiconductor
β Scribed by J.M. Pawlikowski; J.F. Kasprzak
- Publisher
- Elsevier Science
- Year
- 1978
- Tongue
- English
- Weight
- 411 KB
- Volume
- 25
- Category
- Article
- ISSN
- 0038-1098
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