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Photomagneto-Electric effect in Graded-Gap Semiconductors

✍ Scribed by A. Fortini; J. P. Saint-Martin

Publisher
John Wiley and Sons
Year
1963
Tongue
English
Weight
510 KB
Volume
3
Category
Article
ISSN
0370-1972

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✦ Synopsis

Abstract

The PME effect in an inhomogeneous semiconductor is calculated assuming uniform local mobilities. An experiment is described in which a gap‐gradient is induced in a germanium crystal by means of a pressure gradient. The result is consistent with previously measured values of the pressure dependence of the energy gap.

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