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The transport and photoelectric phenomena in graded band-gap semiconductor layers

โœ Scribed by J.M. Pawlikowski

Publisher
Elsevier Science
Year
1981
Weight
252 KB
Volume
105
Category
Article
ISSN
0378-4363

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There is a significant and unexplained drop in the band-gap pressure coefficients of III-V ternary semiconductor alloys grown as strained layers compared with the bulk binary values. For example, the drop for In x Ga 1ร€x As is about รฐ50xรž meV/GPa. In the past, first order effects of pressure have be