✦ LIBER ✦

Phosphorus doping for hydrogenated amorphous silicon films by a low-energy ion doping technique

✍ Scribed by Yoshida, A.; Setsune, K.; Hirao, T.

Book ID: 121293179
Publisher: American Institute of Physics
Year: 1987
Tongue: English
Weight: 542 KB
Volume: 51
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.98464

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Structural evolution and electronic prop

Structural evolution and electronic properties of phosphorus-doped hydrogenated amorphous silicon thin films deposited by PECVD

✍ Jian He, Wei Li, Rui Xu, KangCheng Qi, YaDong Jiang 📂 Article 📅 2012 🏛 SP Science China Press 🌐 English ⚖ 525 KB

Depth profile measurements of aluminium

Depth profile measurements of aluminium film on phosphorus-doped hydrogenated amorphous silicon layers by Auger electron spectroscopy

✍ Shin-Ichiro Ishihara; Takashi Hirao 📂 Article 📅 1987 🏛 Elsevier Science 🌐 English ⚖ 240 KB

Phosphorus and boron doping effects on s

Phosphorus and boron doping effects on solid phase recrystallization of polycrystalline silicon films amorphized by germanium ion implantation

✍ M. -Y. Kang; T. Yamamoto; T. Matsui; T. Kuwano 📂 Article 📅 1996 🏛 Springer 🌐 English ⚖ 188 KB

A peculiarity of ion beam induced epitax

A peculiarity of ion beam induced epitaxial crystallization with low implantation energies applied to doped amorphous silicon layers

✍ Skorupa, W. ;Voelskow, M. ;Matthäi, J. 📂 Article 📅 1987 🏛 John Wiley and Sons 🌐 English ⚖ 216 KB

Boron doping and post-hydrogenation effe

Boron doping and post-hydrogenation effects on optical gaps and urbach tails of amorphous hydrogenated silicon films prepared by chemical vapour deposition

✍ S.P. Coulibaly; F. De Chelle; J.M. Berger; J.P. Ferraton; A. Donnadieu; J. Magar 📂 Article 📅 1984 🏛 Elsevier Science 🌐 English ⚖ 377 KB

Solid phase epitaxial regrowth of amorph

Solid phase epitaxial regrowth of amorphous layers in silicon created by low energy phosphorus implantation: A medium energy ion scattering study

✍ S. Ruffell; I.V. Mitchell; P.J. Simpson 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 210 KB

Medium energy ion scattering (MEIS) has been used to study the kinetics of solid phase epitaxial regrowth (SPEG) of ultrathin amorphous layers created by room temperature implantation of 5 keV energy phosphorus ions into Si(1 0 0). P ion fluences ranged from 5e14 cm À2 up to 1e16 cm À2 , the associa