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Depth profile measurements of aluminium film on phosphorus-doped hydrogenated amorphous silicon layers by Auger electron spectroscopy

โœ Scribed by Shin-Ichiro Ishihara; Takashi Hirao

Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
240 KB
Volume
155
Category
Article
ISSN
0040-6090

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In-depth composition profile of anodic o
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โœ S. Matsuzawa; N. Baba; S. Tajima ๐Ÿ“‚ Article ๐Ÿ“… 1979 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 286 KB

In-depth composition profiles of the an&c oxide films grown on Al (1 I1 ), (I 10) and (100) single crystal electrodes in ammonium borate were studied by Auger electron spectroscopy with Ar ion etching. The oxide film had the composition of Ai,O, as referenced to an authentic a-Al,O, single crystal.