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Phase transitions in thin Ge2Sb2Te5chalcogenide films according to Raman spectroscopy data

โœ Scribed by Avachev, A. P.; Vikhrov, S. P.; Vishnyakov, N. V.; Kozyukhin, S. A.; Mitrofanov, K. V.; Terukov, E. I.

Book ID
114992413
Publisher
Springer
Year
2012
Tongue
English
Weight
194 KB
Volume
46
Category
Article
ISSN
1063-7826

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The amorphous-to-crystal transition has been studied through in situ resistance measurements in Ge 2 Sb 2 Te 5 thin films doped by ion implantation with nitrogen, oxygen or fluorine at different concentrations. Enhancement of the thermal stability has been observed in O and N amorphous doped Ge 2 Sb