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Si doping in Ge2Sb2Te5film to reduce the writing current of phase change memory

✍ Scribed by J. Feng; Y. Zhang; B.W. Qiao; Y.F. Lai; Y.Y. Lin; B.C. Cai; T.A. Tang; B. Chen


Publisher
Springer
Year
2007
Tongue
English
Weight
526 KB
Volume
87
Category
Article
ISSN
1432-0630

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