Phase formation in Ti after high fluence/high temperature nitrogen implantation

✍ Scribed by D. Manova; J.W. Gerlach; H. Neumann; W. Assmann; S. Mändl

• Book ID: 103860727
• Publisher: Elsevier Science
• Year: 2006
• Tongue: English
• Weight: 377 KB
• Volume: 242
• Category: Article
• ISSN: 0168-583X
• DOI: 10.1016/j.nimb.2005.08.058

✦ Synopsis

Nitrogen ion implantation in titanium using plasma immersion ion implantation (PIII) is investigated at a pulse voltage of 15 keV and elevated temperatures between 300 and 750 °C. Starting the implantation at room temperature leads to the parallel formation of TiN and Ti 2 N, as observed by X-ray diffraction (XRD). In contrast, additionally external heating with a start of the ion implantation at 350 °C results in the dominance of Ti 2 N. The nitrogen surface concentration is in all cases at 30-35 at.%. Different activation energies and kinetics for the processes (1) Ti ! e-Ti 2 N, (2) Ti ! d-TiN and (3) e-Ti 2 N ! d-TiN, with the activation energy increasing from (1) to ( 2) and (3), are postulated. Control experiments with plasma nitriding can be interpreted as an indication of additional radiation effects.