High fluence nitrogen implantation in Al/Ti multilayers

✍ Scribed by D. Peruško; M. Milosavljević; V. Milinović; B. Timotijević; A. Zalar; J. Kovač; B. Praček; C. Jeynes

• Book ID: 103862831
• Publisher: Elsevier Science
• Year: 2008
• Tongue: English
• Weight: 221 KB
• Volume: 266
• Category: Article
• ISSN: 0168-583X
• DOI: 10.1016/j.nimb.2008.03.034

✦ Synopsis

We have studied the effects of high fluence nitrogen ion implantation on the structural changes in Al/Ti multilayers, with the aim of achieving multilayered metal-nitrides. The starting structures consisted of 10 alternate sputter-deposited Al and Ti films, with a total thickness of 270 nm, on (1 0 0) Si substrates. They were implanted with 200 keV N þ 2 , to 1 Â 10 17 and 2 Â 10 17 at/cm 2 , the projected range being around half-depth of the multilayers. Structural characterization was performed by Rutherford backscattering, Auger electron spectroscopy and transmission electron microscopy. It was found that ion implantation to the higher fluence induces a full intermixing of Al/Ti layers, resulting in a multilayered structure with different content of Al, Ti and N. The applied method can be interesting for preparation of graded (Al,Ti)N multilayers, with a controlled content of nitrogen and a controlled level of Al-Ti intermixing within the structures.